@ARTICLE{Kulesza-Matlak_G._Black_2018,
 author={Kulesza-Matlak, G. and Gawlińska, K. and Starowicz, Z. and Sypień, A. and Drabczyk, K. and Drabczyk, B. and Lipiński, M. and Zięba, P.},
 volume={vol. 63},
 number={No 2},
 journal={Archives of Metallurgy and Materials},
 howpublished={online},
 year={2018},
 publisher={Institute of Metallurgy and Materials Science of Polish Academy of Sciences},
 publisher={Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences},
 abstract={In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.},
 type={Artykuły / Articles},
 title={Black Silicon Obtained in Two-Step Short Wet Etching as a Texture for Silicon Solar Cells – Surface Microstructure and Optical Properties Studies},
 URL={http://ochroma.man.poznan.pl/Content/106716/PDF/AMM-2018-2-62-Kulesza.pdf},
 doi={10.24425/122436},
 keywords={black silicon, low temperature texturization, silicon nanowires, solar cells, multicrystalline silicon},
}