@ARTICLE{Izhninab_I.I_Effect_2019,
 author={Izhninab, I.I and Fitsych, O.I. and Świątek, Z. and Morgiel, Y. and Bonchyk, O.Yu. and Savytskyy, H.V. and Mynbaev, K.D. and Voitsekhovskii, A.V. and Korotaev, A.G. and Yakushev, M.V. and Varavin, V.S. and Dvoretsky, S.A.},
 volume={vol. 27},
 number={No 1},
 journal={Opto-Electronics Review},
 pages={14-17},
 howpublished={online},
 year={2019},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and optical reflection. Strong influence of the graded-gap surface layer grown on top of the film on the behaviour of implantation-induced defects under arsenic activation annealing was revealed and interpreted.},
 type={Article},
 title={Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride},
 URL={http://ochroma.man.poznan.pl/Content/115232/PDF/opelre_2019_27_1_14-17.pdf},
 keywords={HgCdTe, Implantation, Defects, Microscopy},
}