@ARTICLE{Stefaniuk_I._Electron_2018,
 author={Stefaniuk, I.},
 volume={vol. 26},
 number={No 2},
 journal={Opto-Electronics Review},
 pages={81-91},
 howpublished={online},
 year={2018},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={In this topic review the results of the X-band electron paramagnetic resonance (EPR) measurements of Mn, Co, Cr, Fe ions in YAlO3 (YAP) crystals and Fe ions in LiNbO3 (LNO) crystals and of chromium doped Bi12GeO20 (BGO) and Ca4GdO(BO3)3 single crystals, are presented. It is well known that the oxide crystals (for example:YAP, LNO, BGO) are one of the most widely used host materials for different optoelectronic applications. The nature of point defect of impurities and produced in the oxide crystal after irradiation by bismuth ions and after irradiation by the 235U ions with energy 9.47 MeV/u and fluency 5 × 1011 cm−1 is discussed. The latter is important for applications of these oxide crystal as laser materials.},
 type={Article},
 title={Electron paramagnetic resonance study of impurities and point defects in oxide crystals},
 URL={http://ochroma.man.poznan.pl/Content/115297/PDF/main.pdf},
 keywords={Electron paramagnetic resonance, Oxide crystals, Point defects, Mn2+, Mn4+, Co2+, Fe3+, Cr3+, Nd3+ and Er3+ ions, Optical materials, Spin-Hamiltonian, Superposition model, Spin-lattice relaxation time},
}