@ARTICLE{Jędrusik_M._Structural_2020,
 author={Jędrusik, M. and Cieniek, Ł. and Kopia, A. and Turquat, Ch. and Leroux, Ch.},
 volume={vol. 65},
 number={No 2},
 journal={Archives of Metallurgy and Materials},
 pages={793-797},
 howpublished={online},
 year={2020},
 publisher={Institute of Metallurgy and Materials Science of Polish Academy of Sciences},
 publisher={Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences},
 abstract={Thin films of crystallized LaCoO3 were grown on Si substrate by Pulsed Laser Deposition at different temperatures (750°C, 850°C and 1000°C). The structural characterization of the LaCoO3 thin films was done by combining several techniques: Scanning Electron Microscopy (SEM), Atomic Force Microscope (AFM), Transmission Electron Microscopy (TEM) and Grazing Incidence X-Ray Diffraction (GIXRD). The thin films crystallized in the expected rhombohedral phase whatever the deposition temperature, with an increase of crystallite size from 70 nm at 750°C to 100 nm at 1000°C, and an average thickness of the thin films of less than 200 nm. At 850°C and 1000°C, the thin films are crack-free, and with a lower number of droplets than the film deposited at 750°C. The grains of LaCoO3 film deposited at 850°C are columnar, with a triangular termination. At 1000°C, an intermediate layer of La2Si2O7 was observed, indicating diffusion of Si into the deposited film.},
 type={Article},
 title={Structural Characterization of LaCoO3 Thin Films Grown by Pulsed Laser Deposition},
 URL={http://ochroma.man.poznan.pl/Content/116059/PDF/AMM-2020-2-36-Jedrusik.pdf},
 doi={10.24425/amm.2020.132822},
 keywords={PLD, thin films, perovskites, LaCoO3},
}