@ARTICLE{Piotrowski_T._Study_2015,
 author={Piotrowski, T. and Węgrzecki, M. and Stolarski, M. and Gościński, K. and Krajewski, T.},
 volume={vol. 23},
 number={No 4},
 journal={Opto-Electronics Review},
 pages={265-270},
 howpublished={online},
 year={2015},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={One of the key parameters determining detection properties of silicon PIN detector structures (p+-ν-n+ or n+-ν-p+) is minority carrier diffusion length in p-n junction regions p-n (p+-ν or n+-ν). The parameter concerned strongly depends on quality of the starting material and technological processes conducted and has a significant impact on detector parameters, in particular dark current intensity. Thus, the parameter must be determined in order to optimise the design and technology of detectors. The paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ1 = 500 nm (silicon penetration depth of around 0.9 μm) and λ2 = 900 nm (silicon penetration depth of around 33 μm). The value of diffusion length was determined by analysing the spatial distribution of optical carrier generation and values of photoelectric currents.},
 type={Article},
 title={Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures},
 URL={http://ochroma.man.poznan.pl/Content/116149/PDF-MASTER/pan_doi_blank.pdf},
 keywords={effective minority diffusion length, surface recombination velocity, epiplanar detector, p-n structures},
}