@ARTICLE{Yoon_Seong_Yu_Electrical_2020,
 author={Yoon, Seong Yu and Choi, Byung Joon},
 volume={vol. 65},
 number={No 3},
 journal={Archives of Metallurgy and Materials},
 pages={1041-1044},
 howpublished={online},
 year={2020},
 publisher={Institute of Metallurgy and Materials Science of Polish Academy of Sciences},
 publisher={Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences},
 abstract={Tin dioxide (SnO2) is an n-type semiconductor and has useful characteristics of high transmittance, excellent electrical properties, and chemical stability. Accordingly, it is widely used in a variety of fields, such as a gas sensor, photocatalyst, optoelectronics, and solar cell. In this study, SnO2 films are deposited by thermal atomic layer deposition (ALD) at 180°C using Tetrakis(dimethylamino)tin and water. A couple of 5.9, 7.4 and 10.1nm-thick SnO2 films are grown on SiO2/Si substrate and then each film is annealed at 400°C in oxygen atmosphere. Current transport of SnO2 films are analyzed by measuring current – voltage characteristics from room temperature to 150°C. It is concluded that electrical property of SnO2 film is concurrently affected by its semiconducting nature and oxidative adsorption on the surface.},
 type={Article},
 title={Electrical Characteristics of Tin Oxide Films Grown by Thermal Atomic Layer Deposition},
 URL={http://ochroma.man.poznan.pl/Content/116379/PDF/AMM-2020-3-12-Byung%20Joon%20Choi.pdf},
 doi={10.24425/amm.2020.133214},
 keywords={Atomic layer deposition, tin oxide, electrical property, oxygen adsorption},
}