@ARTICLE{Bąba_Sebastian_Multiparameter_2021,
 author={Bąba, Sebastian},
 volume={69},
 number={3},
 journal={Bulletin of the Polish Academy of Sciences Technical Sciences},
 pages={e137386},
 howpublished={online},
 year={2021},
 abstract={The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.},
 type={Article},
 title={Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load},
 URL={http://ochroma.man.poznan.pl/Content/119835/PDF/29_02133_Bpast.No.69(3)_24.06.21_Druk.pdf},
 doi={10.24425/bpasts.2021.137386},
 keywords={reliability engineering, reliability modelling, power MOSFET, SiC},
}