@ARTICLE{Martyniuk_Piotr_Low-temperature_2023,
 author={Martyniuk, Piotr and Benyahi, Djalal},
 volume={31},
 number={special issue},
 journal={Opto-Electronics Review},
 pages={e144557},
 howpublished={online},
 year={2023},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2° offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, λcut-off = 5.4 µm at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the ~7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum ~100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.},
 type={Article},
 title={Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors},
 URL={http://ochroma.man.poznan.pl/Content/126140/PDF-MASTER/OPELRE_2023_71_Special_Issue_P_Martyniuk.pdf},
 doi={10.24425/opelre.2023.144557},
 keywords={molecular beam epitaxy, superlattice, X-ray diffraction, III-V semiconductor},
}