@ARTICLE{Boguski_Jacek_Multi-technique_2023,
 author={Boguski, Jacek and Wróbel, Jarosław and Złotnik, Sebastian and Budner, Bogusław and Liszewska, Malwina and Kubiszyn, Łukasz and Michałowski, Paweł P. and Ciura, Łukasz and Moszczyński, Paweł and Odrzywolski, Sebastian and Jankiewicz, Bartłomiej and Wróbel, Jerzy},
 volume={31},
 number={special issue},
 journal={Opto-Electronics Review},
 pages={e144564},
 howpublished={online},
 year={2023},
 publisher={Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology},
 abstract={The article presents the results of diameter mapping for circular-symmetric disturbance of homogeneity of epitaxially grown InAs (100) layers on GaAs substrates. The set of acceptors (beryllium) doped InAs epilayers was studied in order to evaluate the impact of Be doping on the 2-inch InAs-on-GaAs wafers quality. During the initial identification of size and shape of the circular pattern, non-destructive optical techniques were used, showing a 100% difference in average roughness between the wafer centre and its outer part. On the other hand, no volumetric (bulk) differences are detectable using Raman spectroscopy and high-resolution X-ray diffraction. The correlation between Be doping level and circular defect pattern surface area has been found.},
 type={Article},
 title={Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern},
 URL={http://ochroma.man.poznan.pl/Content/126146/PDF-MASTER/OPELRE_2023_71_Special_Issue_J_Boguski.pdf},
 doi={10.24425/opelre.2023.144564},
 keywords={wafer homogeneity, wafer defect pattern, surface roughness, indium arsenide, beryllium doping},
}