@ARTICLE{Cho_Min_Gyoo_Simplifying_2024,
 author={Cho, Min Gyoo and Go, Jae Hee and Choi, Byung Joon},
 volume={vol. 69},
 number={No 2},
 journal={Archives of Metallurgy and Materials},
 pages={463-466},
 howpublished={online},
 year={2024},
 publisher={Institute of Metallurgy and Materials Science of Polish Academy of Sciences},
 publisher={Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences},
 abstract={Self-rectifying resistive memory can reduce the complexity of crossbar array architecture for high density memory. It can replace integrated memory and selector with one self-rectifying cell. Such a simple structure can be applied for the vertical resistive memory. Both top and bottom interface between insulating layer and electrodes are crucial to achieve highly self-rectifying memory cell. In this study, bilayer devices composed of HfO2 and TiO2 were fabricated using atomic layer deposition (ALD) for the implementation of self-rectifying memory cells. The physical, chemical, and electrical properties of HfO2/TiO2 and TiO2/HfO2 sandwiched between Pt and TiN electrodes were investigated. By analyzing the conduction mechanism of bilayer devices, the higher rectification ratio of TiO2/HfO2 stack was due to the difference in height and the number of energy barriers.},
 type={Article},
 title={Simplifying High-Density Memory: Exploiting Self-Rectifying Resistive Memory with TiO2/HfO2 Bilayer Devices},
 URL={http://ochroma.man.poznan.pl/Content/131844/AMM-2024-2-15-Byung%20Joon%20Choi.pdf},
 doi={10.24425/amm.2024.149767},
 keywords={Atomic layer deposition, bilayer, self-rectifying memory, rectification ratio},
}