Title

A 100 W SiC MESFET Amplifier for L-band T/R Module of APAR

Journal title

International Journal of Electronics and Telecommunications

Yearbook

2011

Volume

vol. 57

Issue

No 1

Authors

Wojtasiak, Wojciech ; Gryglewski, Daniel

Divisions of PAS

Nauki Techniczne

Publisher

Polish Academy of Sciences Committee of Electronics and Telecommunications

Date

2011

Identifier

DOI: 10.2478/v10177-011-0020-0 ; eISSN 2300-1933 (since 2013) ; ISSN 2081-8491 (until 2012)

Source

International Journal of Electronics and Telecommunications; 2011; vol. 57; No 1

References

Sze S. (2002), Semiconductors Devices: Physics and Technology. ; Clarke R. (1998), Recent Advances in High Temperature, High Frequency SiC, null, 18. ; Parker D. (2002), Phased Arrays—Part I: Theory and Architectures, IEEE Transactions on Microwave, Theory and Techniques, 50, 3, 678, doi.org/10.1109/22.989953 ; Gryglewski D. (2009), T/R Modules for APAR, Elektronika, 4, 56. ; Wojtasiak W. (2001), Temperature-Dependent Modelling of High Power MESFET Using Thermal FDTD Method, null, 1, 411. ; R. Michnowski and W. Wojtasiak, "The Electro-Thermal Model of High Power LDMOS FET," vol. 1, 6-10 October 2003, pp. 243-246. ; Wojtasiak W. (2005), The Eectrothermal Modeling of High Power Microware FET and its Applications, Electronics and Telecommunications Quarterly, 51, 85. ; J. L. B. W. (editor), <i>High-Power GaAs FET Amplifiers</i>. Artech House, Inc., 1993.