Szczegóły Szczegóły PDF BIBTEX RIS Tytuł artykułu Comparative Tests of Temperature Effects on the Performance of Gan and Sic Photodiodes Tytuł czasopisma Metrology and Measurement Systems Rocznik 2015 Wolumin vol. 22 Numer No 1 Autorzy Ćwirko, Joanna ; Ćwirko, Robert ; Mikołajczyk, Janusz Słowa kluczowe optical detectors ; UV radiation ; photodiode ; GaN detector ; SiC detector Wydział PAN Nauki Techniczne Zakres 119-126 Wydawca Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation Data 2015[2015.01.01 AD - 2015.12.31 AD] Typ Artykuły / Articles Identyfikator DOI: 10.1515/mms-2015-0010 ; ISSN 2080-9050, e-ISSN 2300-1941 Źródło Metrology and Measurement Systems; 2015; vol. 22; No 1; 119-126 Referencje Chen (2012), Analysis of temperature - dependent characteristics of a SiC metal - semiconductor - metal ultraviolet photodetector, Applied Physics, 57, 34, doi.org/10.1007/s11434-012-5494-3 ; Liu (2006), Demonstration of Ultraviolet SiC PIN Avalanche Photodiodes, IEEE Photonics Technology Letters, 18, 2508, doi.org/10.1109/LPT.2006.887211 ; Kim (2002), GaN metal - semiconductor - metal ultraviolet photodetector with IrO Schottky contact, Appl Phys Lett, 81, doi.org/10.1063/1.1524035 ; Chen (2001), GaN Metal - Semiconductor - Metal Ultraviolet Photodetectors With Transparent Indium - Tin - Oxide Schottky Contacts, IEEE Photonics Technology Letters, 8. ; Shur (2003), UV Solid - State Light Emitters and NATO II ISBN book, Detectors Science Series, 8, 144. ; Rogalski (1996), Semiconductor ultraviolet photodetectors, Appl Phys, 79. ; Zgorka (2001), Application of conventional UV photodiode array and fluorescence detection to analysis of phenolic acids in plant material and pharmaceutical preparations, Journal of Pharmaceutical and Biomedical Analysis, 24, 1065, doi.org/10.1016/S0731-7085(00)00541-0 ; Bielecki (2004), Photoreceiver for BLU / UV detection SPIE, Proc, 5472, doi.org/10.1117/12.547653 ; Kirschman (1999), Status of Silicon Carbide ( SiC as a WideBandgap Semiconductor for High Temperature Applications High - Temperature Electronics IEEE Press ISBN, Review, 11. ; Iucolano (2008), Influence of high - temperature GaN annealed surface on the electrical properties of Ni / GaN Schottky contacts, Appl Phys, 10, 104, doi.org/10.1063/1.3006133