Title

Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2)

Journal title

Archives of Metallurgy and Materials

Yearbook

2015

Issue

No 3 September

Authors

Zamurueva, O.V. ; Myronchuk, G.L. ; K. Oźga ; Szota, M. ; El-Naggar, A.M. ; Albassam, A.A. ; Parasyuk, O.V. ; Piskach, L.V. ; Kityk, I.V.

Divisions of PAS

Nauki Techniczne

Publisher

Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences

Date

2015[2015.01.01 AD - 2015.12.31 AD]

Identifier

DOI: 10.1515/amm-2015-0343 ; e-ISSN 2300-1909

Source

Archives of Metallurgy and Materials; 2015; No 3 September

References

Burlakov (1989), Raman scattering in ferroelectric TlGaSe Soft Mode and Order Parameter, Status Solidi, 9, 151. ; Miller (1973), Über ternäre Thalliumchalkogenide mit Thalliumselenidstruktur, Allg Chem, 1, 398. ; Abdullaeva (1982), Special features of negative photoconductivity in TlGaSe, Phys Stat Sol, 6, 69. ; Zamurueva (2014), Structural and optical features of novel Tl xIn xGexSe chalcogenide crystals, Mater, 15, 614. ; Abdullaev (2005), Conductivity anisotropy and localization of charge carriers in TlInTe single crystals, Solid State, 21, 1221. ; Mamedov (2003), Effect of lattice deformation and phase transitions on the electronic spectra of TlGaS and TlInS layered semiconductors, Solid State, 20, 2242. ; Myronchuk (2013), Spectral and conductivity features of novel ternary Tl xIn xSnxS crystals, Res Technol, 13, 464, doi.org/10.1002/crat.201300126 ; Abdullaeva (1980), Near - band - edge optical properties of TlGaS xSe mixed crystals, Stat Sol, 7, 102. ; Kerimova (1997), Effect of doping with Ag Cu and Sn on the electric and photoelectric properties of TlInSe single crystals, Mater, 11, 1121. ; Abdullaev (1985), Phase transition and anisotropy of thermal expansion in TlInS Solid State, Commun, 8, 601. ; Myronchuk (2014), Structural and optical properties of novel optoelectronic Tl xIn xSixSe single crystals, Mater Sci Mater Electron, 3, 3226, doi.org/10.1007/s10854-014-2007-y