Details Details PDF BIBTEX RIS Title AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices Journal title Opto-Electronics Review Yearbook 2015 Volume vol. 23 Issue No 1 Authors Alyoruk, M.M. ; Ergun, Y. ; Hostut, M. Keywords InAs/AlSb/GaSb type−II SL structure ; HH−LH splitting ; N−structure ; DFT ; layer thickness effect Divisions of PAS Nauki Techniczne Coverage 24-27 Publisher Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology Date 27.01.2015 Type Article Identifier ISSN 1896-3757 Source Opto-Electronics Review; 2015; vol. 23; No 1; 24-27 <div class="test"></div>