Title

Fabrication and characterisation of the PiN Ge photodiode with poly-crystalline Si:P as n-type region

Journal title

Opto-Electronics Review

Yearbook

2023

Volume

31

Issue

special issue

Affiliation

Durlin, Quentin : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Aliane, Abdelkader : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; André, Luc : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Kaya, Hacile : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Le Cocq, Mélanie : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Goudon, Valérie : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Vialle, Claire : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Veillerot, Marc : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France ; Hartmann, Jean-Michel : Univ. Grenoble Alpes, CEA-Leti, F-38000 Grenoble, France

Authors

Durlin, Quentin ; Aliane, Abdelkader ; André, Luc ; Kaya, Hacile ; Le Cocq, Mélanie ; Goudon, Valérie ; Vialle, Claire ; Veillerot, Marc ; Hartmann, Jean-Michel

Keywords

Germanium (Ge) ; photodiode ; short-wave infrared detector

Divisions of PAS

Nauki Techniczne

Coverage

e144550

Publisher

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Date

24.02.2023

Type

Article

Identifier

DOI: 10.24425/opelre.2023.144550