Details
Title
The method for extracting defect levels in the MCT multilayer low-bandgap heterostructuresJournal title
Opto-Electronics ReviewYearbook
2024Volume
32Issue
1Authors
Affiliation
Majkowycz, Kinga : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland ; Kopytko, Małgorzata : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland ; Murawski, Krzysztof : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, Poland ; Martyniuk, Piotr : Institute of Applied Physics, Military University of Technology, ul. gen. Sylwestra Kaliskiego 2, 00-908 Warsaw, PolandKeywords
deep-level transient spectroscopy (DLTS) ; traps ; MOCVD ; MCTDivisions of PAS
Nauki TechniczneCoverage
e149182Publisher
Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of TechnologyDate
18.02.2024Type
ArticleIdentifier
DOI: 10.24425/opelre.2024.149182Abstracting & Indexing
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