Tytuł artykułu

Optimization of MBE-grown GaSb buffer on GaAs substrates for infrared detectors

Tytuł czasopisma

Opto-Electronics Review

Rocznik

2024

Wolumin

32

Numer

4

Autorzy

Jarosz, Dawid ; Bobko, Ewa ; Trzyna-Sowa, Małgorzata ; Przeździecka, Ewa ; Stachowicz, Marcin ; Ruszała, Marta ; Krzemiński, Piotr ; Juś, Anna ; Maś, Kinga ; Wojnarowska-Nowak, Renata ; Nowak, Oskar ; Gudyka, Daria ; Tabor, Brajan ; Marchewka, Michał

Afiliacje

Jarosz, Dawid : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Bobko, Ewa : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Trzyna-Sowa, Małgorzata : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Przeździecka, Ewa : Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland ; Stachowicz, Marcin : Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland ; Ruszała, Marta : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Krzemiński, Piotr : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Juś, Anna : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Maś, Kinga : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Wojnarowska-Nowak, Renata : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Nowak, Oskar : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Gudyka, Daria : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Tabor, Brajan : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland ; Marchewka, Michał : Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, al. Rejtana 16, 35-959 Rzeszow, Poland

Słowa kluczowe

gallium arsenide ; gallium antimonide ; molecular beam epitaxy ; heteroepitaxy

Wydział PAN

Nauki Techniczne

Zakres

e152620

Wydawca

Polish Academy of Sciences (under the auspices of the Committee on Electronics and Telecommunication) and Association of Polish Electrical Engineers in cooperation with Military University of Technology

Data

29.10.2024

Typ

Article

Identyfikator

DOI: 10.24425/opelre.2024.152620 ; ISSN 1896-3757

Indeksowanie w bazach

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