Details Details PDF BIBTEX RIS Title Effect of vacancy defect position on the Zigzag Phosphorene Nanoribbon Tunneling FETs Journal title International Journal of Electronics and Telecommunications Yearbook 2025 Volume vol. 71 Issue No 4 Authors Owlia, Hadi ; Bagher, Nasrollahnejad Mohammad ; Rezai, Abdalhossein Affiliation Owlia, Hadi : Department of Electrical Engineering, Faculty of Engineering, Ardakan University, P.O. Box 184, Ardakan, Iran ; Bagher, Nasrollahnejad Mohammad : Department of Electrical Engineering, Gorgan Branch, Islamic Azad University, Gorgan, Iran ; Rezai, Abdalhossein : Department of Electrical Engineering, University of Science and Culture, Tehran, Iran Keywords Phosphorene nanoribbon ; vacancy defect ; CP2K method ; Density functional tight binding Divisions of PAS Nauki Techniczne Coverage 1-6 Publisher Polish Academy of Sciences Committee of Electronics and Telecommunications Date 22.10.2025 Type Article Identifier DOI: 10.24425/ijet.2025.155476 <div class="test"></div>