Tytuł artykułu

Effect of vacancy defect position on the Zigzag Phosphorene Nanoribbon Tunneling FETs

Tytuł czasopisma

International Journal of Electronics and Telecommunications

Rocznik

2025

Wolumin

vol. 71

Numer

No 4

Autorzy

Owlia, Hadi ; Bagher, Nasrollahnejad Mohammad ; Rezai, Abdalhossein

Afiliacje

Owlia, Hadi : Department of Electrical Engineering, Faculty of Engineering, Ardakan University, P.O. Box 184, Ardakan, Iran ; Bagher, Nasrollahnejad Mohammad : Department of Electrical Engineering, Gorgan Branch, Islamic Azad University, Gorgan, Iran ; Rezai, Abdalhossein : Department of Electrical Engineering, University of Science and Culture, Tehran, Iran

Słowa kluczowe

Phosphorene nanoribbon ; vacancy defect ; CP2K method ; Density functional tight binding

Wydział PAN

Nauki Techniczne

Zakres

1-6

Wydawca

Polish Academy of Sciences Committee of Electronics and Telecommunications

Data

22.10.2025

Typ

Article

Identyfikator

DOI: 10.24425/ijet.2025.155476 ; eISSN 2300-1933 (since 2013) ; ISSN 2081-8491 (until 2012)