Szczegóły Szczegóły PDF BIBTEX RIS Tytuł artykułu The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs Tytuł czasopisma Metrology and Measurement Systems Rocznik 2015 Wolumin vol. 22 Numer No 3 Autorzy Górecki, Krzysztof ; Górecki, Paweł Słowa kluczowe IGBT ; thermal resistance ; measurements ; transistor ; semiconductor devices Wydział PAN Nauki Techniczne Zakres 455-464 Wydawca Polish Academy of Sciences Committee on Metrology and Scientific Instrumentation Data 2015[2015.01.01 AD - 2015.12.31 AD] Typ Artykuły / Articles Identyfikator DOI: 10.1515/mms-2015-0036 ; ISSN 2080-9050, e-ISSN 2300-1941 Źródło Metrology and Measurement Systems; 2015; vol. 22; No 3; 455-464 Referencje Górecki (2000), The pulse methods of the thermal parameters measurement in the Darlington Power transistor Metrol Meas, Syst, 7, 287. ; Górecki (2014), The semiconductor device thermal model taking into account non - linearity and multhipathing of the cooling system Journal of Physics, Conference Series, 494. ; Zarębski (2008), A Method of the Thermal Resistance Measurements of Semiconductor Devices with Junction, Measurement, 41, 259, doi.org/10.1016/j.measurement.2006.11.009 ; Zarębski (2010), The electrothermal large - signal model of power MOS transistors for SPICE IEEE Transaction on Power, Electronics, 25, 1265. ; Castellazzi (2006), Reliability analysis and modeling of power MOSFETs in the PowerNet IEEE Transactions on Power, Electronics, 21, 603. ; Frankiewicz (2014), Investigation of heat transfer in integrated circuits Metrol Meas, Syst, 21, 111. ; Szekely (1997), A New Evaluation Method of Thermal Transient Measurement Results Microelectronic, Journal, 28, 277.